BSZ0902NSATMA1

$1.14

Description：MOSFET N-CH 30V 19A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b723f0185e6f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 19A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 48W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ0902NSATMA1

Overview

The BSZ0902NSATMA1 is an N-channel OptiMOS Power-MOSFET with a 30 V drain-source voltage rating. It features a maximum on-resistance of 2.6 mΩ at VGS=10V and 3.5 mΩ at VGS=4.5V, supporting a continuous drain current of 106 A at TC=25°C. The device utilizes a PG-TSDSON-8 FL (S3O8) surface-mount package. Key electrical parameters include a total gate charge of 13 nC at VGS=4.5V and 26 nC at VGS=10V, with a thermal resistance junction-to-case of 2.6 K/W.

Feature Summary

Optimized for high-performance Buck converters in server and VGA applications
Features very low figure of merit Qoss for high-frequency switching power supplies
Includes monolithic integrated Schottky-like diode characteristics
Qualified according to JEDEC standards for target applications

Applications

High-performance Buck converters
Server power supply designs
VGA power management circuits

Procurement Notes

Verify the specific ordering code suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the PG-TSDSON-8 FL package outline dimensions provided in the datasheet. Confirm RoHS compliance and halogen-free status requirements align with project specifications before finalizing procurement orders.

Selection Notes

Select this component for applications requiring low conduction losses at logic-level gate voltages. The low RDS(on) at VGS=4.5V makes it suitable for direct drive from standard logic controllers. Evaluate the thermal performance based on the specified junction-to-case resistance and ensure adequate PCB copper area for heat dissipation during operation.

Part Context

This part belongs to the Infineon OptiMOS family of power MOSFETs. It is designed specifically for efficiency improvements in synchronous rectification and buck converter topologies. The technology focuses on minimizing switching losses through optimized gate charge and output capacitance characteristics compared to previous generations.

Replacement Considerations

BSZ0902NSI

FAQ

Is the BSZ0902NS qualified for automotive applications?

The datasheet states the device is qualified according to JEDEC standards for target applications but does not explicitly list automotive qualification standards such as AEC-Q101.