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Product Detailed Parameters
- Description：MOSFET N-CH 30V 21A/40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ0902NSIATMA1 is a single N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a TDSON-8 surface-mount package and operates with a drain-source voltage of 30 V. The device supports a continuous drain current of 40 A at 25°C and handles pulsed currents up to 160 A. Key electrical parameters include a maximum on-resistance of 2.8 mΩ at 10 V gate drive and 3.7 mΩ at 4.5 V. Gate charge is typically 24 nC at 10 V and 12.2 nC at 4.5 V. Thermal resistance is rated at 2.6 K/W, with power dissipation capability of 48 W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Monolithically integrated Schottky-like diode for efficient body diode performance
- OptiMOS technology providing low on-resistance and high switching efficiency
- Logic level gate drive compatibility for direct microcontroller interfacing
Applications
- DC-DC converters
- Motor control circuits
- Load switching applications
Procurement Notes
Verify the specific suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required OptiMOS generation and thermal characteristics for your design. Cross-reference the datasheet version to validate parameter tolerances before finalizing procurement orders.
Selection Notes
Select this component when a 30 V N-channel MOSFET with low Rds(on) in a compact TDSON-8 package is required. Consider the 40 A continuous current rating and 48 W power dissipation limits. Evaluate the logic-level gate threshold for compatibility with 4.5 V or 5 V drive signals. Compare thermal resistance values against available PCB copper area for adequate heat sinking.
Part Context
This part belongs to the OptiMOS family of power MOSFETs designed for high efficiency and reliability. The BSZ0902NSI variant specifically targets applications requiring robust performance in small form factors. It represents an evolution in silicon technology aimed at reducing conduction losses while maintaining fast switching speeds for modern power management systems.
Replacement Considerations
Consult official Infineon replacement guides for verified substitutes. Generic equivalents may not match the monolithic Schottky diode integration or specific thermal resistance ratings.
