BSZ0910LSATMA1

Overview

The BSZ0910LS is an OptiMOS™ 5 N-channel Power-MOSFET with a 30 V drain-source voltage rating. It features a maximum continuous drain current of 40 A at TC=25°C and a pulsed drain current of 160 A. The device exhibits a low on-resistance (RDS(on)) of 5.7 mΩ max at VGS=4.5V and 4.5 mΩ max at VGS=10V. Total gate charge is 17 nC at VGS=10V and 8.5 nC at VGS=4.5V. Output charge (QOSS) is 12 nC. Thermal resistance from junction to case is 3.4 K/W, while junction-to-ambient is 60 K/W on a standard PCB. Operating temperature ranges from -55°C to 150°C.

Feature Summary

• Optimized for chargers and adapters including USB-PD and wireless charging applications
• Integrated monolithic Schottky-like diode for synchronous rectification
• Very low on-resistance at VGS=4.5V enabling efficient logic-level drive
• Superior thermal resistance characteristics for high power density

Applications

• USB-PD charger designs
• Wireless charging systems
• General adapter power supplies

Procurement Notes

Verify the specific ordering code matches the required package variant. Confirm RoHS compliance and halogen-free status against IEC61249-2-21 standards if required by your manufacturing process. Ensure JEDEC Standard qualification aligns with your reliability requirements. Check datasheet revision history for any updates to electrical parameters or thermal characteristics before finalizing design specifications.

Selection Notes

Select this component when low RDS(on) at 4.5V gate drive is critical for efficiency in compact power stages. The integrated Schottky-like diode simplifies synchronous rectifier designs by eliminating external body diode reliance. Consider the 60 K/W thermal resistance for PCB layout planning to ensure adequate heat dissipation without excessive copper area. Verify that the 30V breakdown voltage provides sufficient margin for your specific input voltage rails.

Part Context

This part belongs to Infineon's OptiMOS™ 5 family, designed for low-voltage power switching. It utilizes advanced trench technology to achieve high current density and low losses. The TSDSON-8 FL package offers a small footprint suitable for space-constrained portable electronics and consumer power adapters. It represents a balance between performance and cost for mainstream charging applications.

Replacement Considerations

Cross-reference with other OptiMOS™ 5 devices in the PG-TSDSON-8 FL package. Verify pinout compatibility and thermal pad configuration. Ensure replacement parts meet the same 30V rating and similar RDS(on) specifications at 4.5V gate drive.