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Product Detailed Parameters
- Description：MOSFET N-CH 30V 12A/40A TSDSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：670 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8 FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ0911LS is an OptiMOS™ 5 N-channel power MOSFET with a 30 V drain-source voltage rating. It features a maximum continuous drain current of 40 A at TC=25°C and a pulsed drain current of 160 A. The device exhibits a maximum on-resistance of 7.0 mΩ at VGS=10V and 9.0 mΩ at VGS=4.5V. Gate charge parameters include a typical total gate charge of 10 nC at VGS=10V and 5.2 nC at VGS=4.5V. Thermal characteristics specify a junction-to-case thermal resistance of 4.9 K/W and a junction-to-ambient resistance of 60 K/W on a standard PCB.
Feature Summary
- Optimized for chargers and adapters, including USB-PD and wireless charging applications
- Features very low on-resistance at VGS=4.5V for efficient logic-level driving
- Superior thermal resistance performance in PG-TSDSON-8 FL package
Applications
- USB Power Delivery (USB-PD) systems
- Wireless charging circuits
- Charger and adapter designs
Procurement Notes
Verify the specific ordering code matches the required tape-and-reel configuration. Confirm that the component meets RoHS compliance and halogen-free requirements according to IEC61249-2-21 standards. Ensure the procurement documentation aligns with JEDEC Standard validation protocols. Cross-reference datasheet revision 2.0 for accurate electrical specifications before finalizing orders.
Selection Notes
Select this component for applications requiring high efficiency at low gate drive voltages. The 4.5V optimized RDS(on) makes it suitable for modern logic-controlled power stages. Evaluate the thermal management capabilities based on the 60 K/W junction-to-ambient resistance when operating without significant heatsinking. Consider the 30V breakdown voltage for low-voltage DC-DC conversion tasks.
Part Context
This part belongs to Infineon's OptiMOS™ 5 family, designed for low-voltage power switching. It utilizes advanced trench technology to minimize conduction losses while maintaining robust avalanche characteristics. The PG-TSDSON-8 FL package provides a compact footprint with enhanced thermal dissipation compared to traditional surface-mount packages.
Replacement Considerations
BSZ0911LSATMA1 is the reel-packaged version of the BSZ0911LS. Verify pinout compatibility and thermal resistance values when substituting with other 30V N-channel MOSFETs from different manufacturers.
