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Product Detailed Parameters
- Description：MOSFET N-CH 40V 12A/40A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 35W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
The BSZ097N04LSGATMA1 is an N-channel OptiMOS3 power transistor with a 40 V drain-source voltage rating. It features a maximum on-resistance of 9.7 mΩ at VGS=10V and supports a continuous drain current of 47 A at TC=25°C. The device utilizes PG-TSDSON-8 packaging, offering a thermal resistance from junction to case of 3.6 K/W. Key electrical parameters include a gate charge of 18 nC at VGS=10V and a breakdown voltage of 40 V.
Feature Summary
- Optimized technology for DC/DC converters and fast switching in SMPS applications
- Logic level operation with excellent gate charge x RDS(on) figure of merit
- Superior thermal resistance characteristics for efficient heat dissipation
- Qualified according to JEDEC standards for target automotive and industrial applications
Applications
- Switching Mode Power Supplies (SMPS)
- DC/DC Converters
- Automotive electronics systems
Procurement Notes
Verify the component authenticity by checking the marking code '097N04L' against the datasheet specifications. Confirm the package type is PG-TSDSON-8 and ensure the ordering suffix matches the required tape and reel configuration. Cross-reference the revision history to ensure compliance with the latest JEDEC qualification standards mentioned in the documentation.
Selection Notes
Select this component when low on-resistance and high efficiency are critical for 40 V logic-level applications. The optimized gate charge reduces switching losses, making it suitable for high-frequency designs. Ensure the thermal management design accounts for the specified junction-to-case thermal resistance to maintain performance within the operating temperature range.
Part Context
This part belongs to Infineon's OptiMOS3 family, designed for robust performance in power conversion. The BSZ097N04LSG variant specifically targets applications requiring high current handling in compact surface-mount packages. It represents a balance between conduction losses and switching speed for modern power supply architectures.
Replacement Considerations
Direct substitutes must match the 40 V rating, PG-TSDSON-8 package, and similar RDS(on) and Qg values. Verify pinout compatibility and thermal characteristics before substitution. Consult official cross-reference tools for confirmed equivalent parts within the manufacturer's portfolio.
