BSZ100N06LS3GATMA1

$1.05

Description：MOSFET N-CH 60V 11A/20A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ab12bfa68d3d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 11A/20A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3500 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerVDFN

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BSZ100N06LS3GATMA1

Overview

The BSZ100N06LS3GATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a TSDSON-8 surface-mount package with a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 20 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 7.7 mΩ at Vgs = 10 V. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 1.2 V, and a total gate charge (Qg) of 45 nC. Thermal performance includes a power dissipation (Pd) of 50 W and an operating temperature range from -55°C to +150°C.

Feature Summary

OptiMOS 3 technology provides optimized low on-resistance for high efficiency.
TSDSON-8 package enables compact surface-mount integration.
Enhanced thermal stability supports operation up to 150°C junction temperature.

Applications

DC-DC converter circuits
Power switching applications
Motor control systems

Procurement Notes

Verify the complete part number including the ATMA1 suffix against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD/SMT assembly processes for the TSDSON-8 footprint. Cross-reference datasheet revisions to validate thermal resistance values and absolute maximum ratings prior to design finalization.

Selection Notes

Select this component for designs requiring a 60V N-channel switch with moderate current handling capabilities. The 7.7 mΩ Rds(on) offers a balance between conduction losses and cost. Verify that the 20 A continuous current rating meets thermal management requirements within the target enclosure. Confirm that the 45 nC gate charge aligns with the driving circuit's capability for efficient switching.

Part Context

This device belongs to the OptiMOS 3 family of silicon MOSFETs designed by Infineon Technologies. The series focuses on improving efficiency in power conversion through reduced on-state resistance. The TSDSON-8 package is part of a standardized lineup for space-constrained electronic applications requiring reliable semiconductor switching solutions.