BSZ100N06NSATMA1

$0.99

Description：MOSFET N-CH 60V 40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ac45f89a57d9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1075 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ100N06NSATMA1

Overview

The BSZ100N06NSATMA1 is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 3 product family. It features a 60 V drain-source voltage rating and a continuous drain current of 20 A at 25 °C. The device exhibits a maximum on-resistance of 7.7 mΩ at a gate-source voltage of 10 V. Packaged in a TSDSON-8 surface-mount format, it supports a junction temperature range from -55 °C to +150 °C with a power dissipation capacity of 50 W.

Feature Summary

OptiMOS 3 technology provides optimized performance for low-voltage switching applications
TSDSON-8 package design enables efficient thermal management and compact board integration
Enhanced avalanche ruggedness ensures reliable operation under transient load conditions

Applications

DC-DC converter circuits
Motor control systems
Load switching modules
Power distribution units

Procurement Notes

Verify the complete part number including the suffix ATMA1 to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to implementation. Cross-reference datasheet revisions to validate electrical parameters against specific design requirements.

Selection Notes

Select this component when a 60 V rating and 20 A continuous current capability are required in a small footprint. Evaluate the 7.7 mΩ on-resistance against system efficiency targets. Ensure the TSDSON-8 thermal characteristics align with the application's heat dissipation constraints and operating environment.

Part Context

This component is part of Infineon's OptiMOS 3 portfolio, designed for general-purpose power switching. It utilizes silicon technology to deliver robust performance in low-voltage environments. The TSDSON-8 package offers a balance between electrical performance and thermal efficiency for space-constrained designs.