BSZ105N04NSGATMA2

$0.16

Description：TRENCH <= 40V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:305929d43ac7 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRENCH <= 40V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 14µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-1
Package / Case：8-PowerVDFN

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BSZ105N04NSGATMA2

Overview

The BSZ105N04NSGATMA2 is an N-channel enhancement mode power MOSFET belonging to the OptiMOS 3 product family, manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount TSDSON-8 package with eight pins. The device is rated for a maximum drain-source voltage of 40 V and supports a continuous drain current of 40 A at 25°C. Key electrical characteristics include a maximum on-resistance of 10.5 mΩ at a gate-source voltage of 10 V and a typical gate charge of 13 nC measured at 10 V. The component operates within a temperature range of -55°C to +150°C and features a single channel configuration.

Feature Summary

OptiMOS 3 technology provides optimized performance for low-voltage switching applications
TSDSON-8 surface mount package design facilitates efficient thermal dissipation
Enhanced mode operation ensures reliable switching control

Applications

DC-DC converter circuits
Power management systems
Motor control interfaces

Procurement Notes

Verify the specific suffix ATMA2 against official manufacturer documentation to confirm tape and reel specifications. Confirm RoHS compliance status through certified datasheets. Check for end-of-life notifications or recommended new design alternatives prior to finalizing procurement plans.

Selection Notes

Select this component when a 40 V rating and 40 A current capacity are required in a compact SMD form factor. Evaluate the 10.5 mΩ on-resistance against system efficiency targets. Ensure the operating environment remains within the specified -55°C to +150°C thermal limits.

Part Context

This part belongs to the OptiMOS 3 series, which represents a generation of silicon power MOSFETs designed for general-purpose switching. The TSDSON-8 package offers a balance between current handling capability and board space efficiency compared to larger traditional packages.