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Product Detailed Parameters
- Description：MOSFET P-CH 30V 11A/40A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.1V @ 73µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：3360 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
The BSZ120P03NS3GATMA1 is a single-channel P-Channel power MOSFET from Infineon Technologies, belonging to the OptiMOS P3 family. It features a -30V drain-source voltage rating and supports a continuous drain current of -40A at 25°C. The device utilizes a TSDSON-8 surface-mount package with an on-resistance (RDS(on)) of 8.6mΩ at VGS=-10V. Key electrical characteristics include a gate charge of 43.2nC and a maximum power dissipation of 69W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- OptiMOS P3 technology provides low on-resistance for high efficiency
- TSDSON-8 package enables compact board space utilization
- Enhanced thermal performance via optimized package design
Applications
- High-side load switching in automotive electronics
- Power management circuits in industrial equipment
- DC-DC converter input protection stages
Procurement Notes
Verify the complete part number including the ATMA1 suffix against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD reflow profiles and check for RoHS compliance status in the latest datasheet revision before finalizing procurement orders.
Selection Notes
Select this component when a robust P-Channel solution is required for 30V systems. The OptiMOS P3 generation offers improved switching characteristics compared to previous iterations. Evaluate thermal resistance requirements against the 69W dissipation limit and ensure the PCB layout supports the TSDSON-8 footprint for optimal heat spreading.
Part Context
This device is part of Infineon's broad portfolio of OptiMOS power transistors designed for automotive and general industrial applications. The OptiMOS P3 series specifically targets applications demanding high reliability and low conduction losses. It complements N-Channel variants within the same voltage class to provide complete bridge or half-bridge solutions.
Replacement Considerations
Cross-reference with other OptiMOS P3 devices such as BSZ086P03NS3G for lower current requirements. Verify pinout compatibility and thermal pad dimensions when substituting with similar TSDSON-8 packages from other manufacturers.
