BSZ22DN20NS3GATMA1

$1.05

Description：MOSFET N-CH 200V 7A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a21d157854c0 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 7A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：225mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：430 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：34W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ22DN20NS3GATMA1

Overview

BSZ22DN20NS3GATMA1 is an N-channel enhancement-mode power MOSFET from the OptiMOS 3 series. It features a PG-TSDSON-8 surface-mount package with a maximum drain-source voltage of 200 V and a continuous drain current of 7 A at 25 °C. The device has a maximum on-resistance of 225 mΩ at VGS=10 V and a typical gate charge of 4.2 nC. It supports a junction temperature range of -55 °C to +150 °C, with a thermal resistance (junction-to-case) of 3.7 K/W.

Feature Summary

Optimized for DC-DC conversion applications
Low on-resistance RDS(on)
Excellent gate charge x RDS(on) figure of merit
Qualified according to JEDEC standards

Applications

DC-DC converters

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance and halogen-free status requirements match project constraints. Check for any specific environmental or qualification certifications required by the target application before finalizing procurement.

Selection Notes

Select this component when a compact SMD solution is needed for 200 V switching applications. The low gate charge and optimized FOM make it suitable for efficient power stages. Ensure the PCB layout provides adequate copper area for the specified thermal resistance values.

Part Context

The BSZ22DN20NS3GATMA1 belongs to the OptiMOS 3 family of silicon power transistors. This generation focuses on improving efficiency in power conversion circuits through reduced switching losses and lower conduction resistance compared to previous iterations.