BSZ900N15NS3GATMA1

$1.03

Description：MOSFET N-CH 150V 13A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2355feb53a6e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 150V 13A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：90mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：510 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：38W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ900N15NS3GATMA1

Overview

The BSZ900N15NS3GATMA1 is an N-channel Power-Transistor from the OptiMOS 3 series, housed in a PG-TSDSON-8 package. It features a drain-source breakdown voltage (VDS) of 150 V and a continuous drain current (ID) of 13 A at TC=25 °C. The maximum on-resistance (RDS(on)) is 90 mΩ at VGS=10 V and ID=10 A. Total gate charge (Qg) is typically 7 nC. The device supports an operating temperature range from -55 °C to +150 °C with a power dissipation of 38 W at TC=25 °C.

Feature Summary

Optimized for excellent gate charge x RDS(on) figure of merit
Very low on-resistance for efficient power switching
Qualified according to JEDEC standards for target applications

Applications

Power management circuits requiring low conduction losses
DC-DC converter topologies
General purpose switching applications

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm packaging details such as tape and reel specifications. Ensure component authenticity by sourcing through authorized distribution channels. Confirm RoHS compliance status and lead-free plating requirements match project specifications before finalizing procurement orders.

Selection Notes

Select this component for designs prioritizing low on-resistance within the 150 V voltage class. Consider the thermal resistance characteristics and package size constraints when designing PCB layouts. Evaluate the gate charge requirements against driver capabilities to ensure optimal switching performance and minimize switching losses in the target application environment.

Part Context

This part belongs to the OptiMOS 3 family of silicon MOSFETs manufactured by Infineon Technologies. The OptiMOS technology focuses on reducing the figure of merit between gate charge and on-resistance. The PG-TSDSON-8 package provides a compact surface-mount solution suitable for high-density electronic assemblies.