BSZ900N20NS3GATMA1

$1.54

Description：MOSFET N-CH 200V 15.2A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5f6f99c3fb9b Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 15.2A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：90mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id：4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs：11.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

Download product information

BSZ900N20NS3GATMA1

Overview

The BSZ900N20NS3GATMA1 is an N-channel OptiMOS™ 3 power transistor manufactured by Infineon Technologies. It features a PG-TSDSON-8 package and operates with a drain-source voltage of 200 V and a continuous drain current of 15.2 A at 25 °C. The device exhibits a maximum on-resistance of 90 mΩ and supports junction temperatures up to 150 °C. Key electrical parameters include a gate threshold voltage ranging from 2 V to 4 V, total gate charge of 8.7 nC to 11.6 nC, and a thermal resistance junction-to-case of 2.5 K/W.

Feature Summary

Optimized for DC-DC conversion applications
Low on-resistance R DS(on) combined with excellent gate charge product
High reliability with Pb-free lead plating and RoHS compliance

Applications

DC-DC converters
Synchronous rectification in 48V systems
Uninterruptible power supplies (UPS)
Inverters for DC motor drives

Procurement Notes

Verify the specific ordering suffix GATMA1 against official Infineon documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure component authenticity through authorized distribution channels and cross-reference part markings with datasheet figures. Confirm environmental compliance status including halogen-free requirements before final procurement integration.

Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 200 V with moderate current capabilities around 15 A. Consider the PG-TSDSON-8 package for compact surface-mount layouts where thermal management via a copper cooling area is feasible. Evaluate the low gate charge characteristics for efficient switching performance in synchronous rectification topologies.

Part Context

This component belongs to the OptiMOS™ 3 family of power transistors designed for automotive and industrial applications. It utilizes silicon technology to deliver robust performance under demanding conditions. The series is characterized by optimized trade-offs between conduction losses and switching speeds, making it suitable for modern power electronics architectures.