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The BT136S-600F,118 is a standard four-quadrant Triac manufactured by WeEn Semiconductors. It features an RMS on-state current rating of 4 A and a non-repetitive peak on-state current of 27 A. The device supports a rated repetitive off-state voltage (VDRM) of 600 V with a maximum off-state leakage current of 100 uA at VDRM. The on-state voltage is specified at 1.4 V. Gate triggering parameters include a maximum holding current (Ih) of 15 mA, a gate trigger voltage (Vgt) of 700 mV, and a gate trigger current (Igt) of 30 mA. Designed for surface mount applications, it utilizes a DPAK-3 (TO-252-3) package and operates within a maximum junction temperature of +125 C.
Verify the specific suffix '118' against the manufacturer's latest datasheet to confirm tape and reel specifications and RoHS compliance status. Ensure the ordering quantity aligns with the standard factory pack size of 2500 units or cut-tape availability. Cross-reference the part number with authorized distributors to confirm current production status and lead times prior to finalizing procurement plans.
Select this component when a 4 A RMS current rating and 600 V blocking voltage are required in a surface-mount footprint. Compare the 30 mA gate trigger current against system drive capabilities to ensure sufficient margin. Evaluate thermal management requirements based on the DPAK-3 package thermal resistance characteristics for the intended ambient operating conditions.
This part belongs to the BT136 series of Triacs from WeEn Semiconductors, which are widely used in general-purpose AC power control applications. The 'S' designation typically indicates a surface-mount variant, while the 'F' suffix denotes specific gate trigger characteristics within the family. This series serves as a common replacement for legacy through-hole devices in modern compact designs.
Potential substitutes include the BT136S-600E,118 and BT136S-600D,118 from the same manufacturer. Verify that alternative suffixes match the required gate trigger current and voltage specifications before substitution.