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BT151Y-650LTFQ is listed in the Scrs range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is PLANAR PASSIVATED SILICON CONTRO. Review the specifications below when checking this part for your BOM.
The BT151Y-650LTFQ is a planar passivated Silicon Controlled Rectifier (SCR) manufactured by WeEn Semiconductors. It is housed in a TO-220 plastic package and designed for applications requiring good bidirectional blocking voltage, high surge current capability, and high junction temperature performance with a maximum Tj of 150 °C. The device features a repetitive peak off-state voltage (VDRM/VRRM) of 650 V, an average on-state current (IT(AV)) of 7.5 A, and a non-repetitive peak on-state current (ITSM) of 120 A at 50/60 Hz. It has a maximum gate trigger current (IGT) of 5 mA and a dV/dt rating of 500 V/µs.
Verify the specific ordering suffix LTFQ against official WeSemiconductor documentation to confirm the exact packing configuration and RoHS compliance status. Ensure the component matches the required thermal management specifications for the intended application environment. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a through-hole SCR with a 650 V rating and 7.5 A average current is required. Consider the TO-220 package for ease of heatsinking if thermal dissipation is a primary concern. Evaluate the 150 °C junction temperature limit against the system's operating conditions to ensure reliability under high-stress scenarios.
This part belongs to the BT151 series of Silicon Controlled Rectifiers from WeEn Semiconductors. The series is characterized by its planar passivation technology, which enhances stability and reliability. The BT151Y variant specifically denotes the 650 V blocking voltage class within this family, suitable for general-purpose power switching applications.
Official substitute part numbers include BT151-650R and BT151-650LTF. Verify pinout compatibility and electrical parameter equivalence before substitution.
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