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Product Detailed Parameters
- Description：MOSFET N-CH 100V 10A TO220AB
- Series：TEMPFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：200mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BTS110NKSA1 is an N-channel vertical power MOSFET manufactured by Infineon Technologies. It is housed in a TO-220AB through-hole package and rated for a maximum drain-source voltage of 100 V. The device supports a continuous drain current of 10 A at case temperature (Tc). This component is designed for general switching applications requiring robust performance in standard transistor outlines.
Feature Summary
- N-channel vertical power MOSFET construction
- Through-hole TO-220AB package configuration
- Rated for 100 V drain-source voltage
- Continuous drain current capability of 10 A at case temperature
Applications
- General purpose switching circuits
- Power management modules
- Industrial control systems
Procurement Notes
Verify the specific suffix 'KSA1' against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging specifications. Ensure the component meets required RoHS compliance standards for your target market, as lifecycle status may vary. Cross-reference pinout dimensions with the TO-220AB mechanical drawing before PCB layout finalization.
Selection Notes
Select this component when a through-hole solution is required for 100 V applications. The TO-220AB package facilitates easy heat sinking compared to surface-mount alternatives. Evaluate thermal resistance requirements based on the 10 A continuous current rating at case temperature to ensure adequate cooling infrastructure is available in the design.
Part Context
This part belongs to Infineon's discrete power MOSFET portfolio. It utilizes vertical N-channel technology optimized for high-voltage switching. The TO-220AB form factor provides mechanical stability and thermal conductivity suitable for medium-power applications where board space allows for larger footprint components.
Replacement Considerations
Check for direct pin-compatible replacements within the same voltage and current class. Verify that any substitute maintains identical package dimensions and thermal characteristics to fit existing mounting hardware without redesign.
