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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 1
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO220-3-5
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BTS114AE3045ANTMA1 is a single N-channel enhancement-mode TEMPFET power MOSFET manufactured by Infineon Technologies. It features an integrated temperature-sensing thyristor for thermal protection. The device is designed for surface mount applications and utilizes a PG-TO220-3-5 package with two electrical connections and one tab connection.
Feature Summary
- Integrates a temperature-sensing thyristor for enhanced thermal management
- Constructed as an N-channel enhancement-mode power MOSFET
- Designed for robust surface mount mounting configurations
Applications
- Automotive power distribution systems
- High-side switching applications requiring thermal monitoring
- Industrial load protection circuits
Procurement Notes
Verify the specific suffix ANTMA1 to confirm the tape and reel packaging configuration. Ensure compatibility with PG-TO220-3-5 footprint requirements during PCB layout. Confirm RoHS compliance status through official manufacturer documentation prior to final procurement decisions.
Selection Notes
Select this component when integrated thermal sensing is required within a single package solution. The TEMPFET technology provides direct temperature feedback capabilities. Consider the surface mount form factor for automated assembly processes requiring high reliability in automotive or industrial environments.
Part Context
This part belongs to Infineon's TEMPFET family, which combines power switching with thermal protection mechanisms. It serves as a specialized alternative to standard discrete MOSFETs where thermal runaway prevention is critical. The integration reduces component count and board space compared to separate sensor solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout and thermal characteristics carefully if considering cross-references from other manufacturers.
