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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：TEMPFET®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V
- Rds On (Max) @ Id, Vgs：65mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO220-3-5
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The Infineon Technologies BTS132E3045ANTMA1 is an N-channel logic-level enhancement-mode Power MOSFET housed in a PG-TO220-3-5 surface mount package. It features a drain-to-source voltage (Vdss) of 60 V and supports a continuous drain current of 24 A at case temperature, with a maximum power dissipation of 75 W. The device operates within a junction temperature range of -55°C to +150°C and includes an integrated TEMPFET® for thermal monitoring.
Feature Summary
- N-channel logic-level enhancement-mode Power MOSFET architecture
- Integrated TEMPFET® for internal temperature sensing
- Surface mount PG-TO220-3-5 packaging
Applications
- High-current switching applications requiring efficient thermal management
- Automotive power distribution systems
- Industrial load control circuits
Procurement Notes
Verify the component status as obsolete before procurement planning. Confirm that the PG-TO220-3-5 package dimensions match your PCB footprint requirements. Ensure that the 60 V rating and 24 A current capacity align with your specific circuit design constraints. Check for available substitute components if new production is required.
Selection Notes
Select this component only if the 60 V breakdown voltage and 75 W power dissipation meet the system's electrical demands. The integrated TEMPFET® provides diagnostic capabilities suitable for safety-critical or high-reliability designs. Consider the surface mount mounting style for automated assembly processes.
Part Context
This part belongs to Infineon's portfolio of high-performance N-channel power MOSFETs designed for demanding applications. It utilizes advanced silicon technology to achieve low on-resistance and robust thermal performance within a standard TO-220 form factor adapted for surface mounting.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the source material due to the component's obsolete status. Designers should consult official replacement guides or evaluate equivalent N-channel MOSFETs with matching voltage, current, and package specifications.
