BTS282Z E3180A

$1.65

Description：MOSFET N-CH 49V 80A TO220-7
Series：TEMPFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:6c92b1b5e8b0 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 49V 80A TO220-7
Series：TEMPFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：49 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id：2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs：232 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4800 pF @ 25 V
FET Feature：Temperature Sensing Diode
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO220-7-180
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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BTS282Z E3180A

Overview

The Infineon BTS282Z E3180A is a Speed TEMPFET N-channel enhancement mode MOSFET designed for automotive low-side switching applications. It features a P-TO220-7 package with an integrated potential-free thyristor temperature sensor. Key electrical parameters include a drain-source voltage (VDS) of 49 V, a maximum on-state resistance (RDS(on)) of 6.5 mΩ at Tj = 150°C, and a nominal load current (ID(nom)) of 52 A. The device supports avalanche energy ratings of 2000 mJ and offers fast switching capabilities up to 1 MHz.

Feature Summary

Integrates a potential-free temperature sensor with thyristor characteristics for direct overtemperature protection
Features high current pinning to limit peak drain current during fault conditions
Capable of handling single-pulse avalanche energy for robust operation in inductive loads

Applications

Automotive low-side smart power switches
High-current inductive load driving
Systems requiring integrated thermal monitoring

Procurement Notes

Verify the specific ordering code suffix against the datasheet table to confirm the exact lead frame finish and tape-and-reel configuration. Ensure the selected variant matches the required thermal footprint and mounting style for your PCB design. Cross-reference the component marking with official Infineon identification guides to prevent counterfeit substitution.

Selection Notes

Select this component when a low-side switch requires built-in thermal sensing without external circuitry. The integrated thyristor sensor allows for direct connection to control logic for immediate shutdown upon overheating. Consider the 49 V rating and 6.5 mΩ RDS(on) for efficiency requirements under high continuous load conditions.

Part Context

This part belongs to the Speed TEMPFET family from Infineon Technologies. These devices combine power MOSFET technology with proprietary temperature sensing elements. The family is specifically engineered for automotive environments, offering high reliability and simplified system design through integrated protection features.