BUH50

Single Bipolar Transistors Overview

The BUH50 is an NPN silicon planar power transistor from onsemi, designed for high-voltage switching applications. It features a maximum collector-emitter voltage (VCEO) of 500 V and a continuous collector current of 4 A. The device supports a power dissipation of 50 W in a through-hole package. Its gain bandwidth product is specified at 4 MHz, with a minimum operating temperature of -65°C and a maximum of +150°C. The transistor is engineered to sustain large inrush currents during start-up or short-circuit conditions.

Single Bipolar Transistors Feature Summary

• Designed to sustain large inrush currents during start-up or load short-circuit conditions
• Improved efficiency due to low base drive requirements with high and flat DC current gain
• Application-specific state-of-the-art die design for robust performance

Single Bipolar Transistors Applications

• 50 Watts halogen electronic ballasts
• High-voltage switching circuits requiring inrush current handling
• Power supply input stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (e.g., G) against the manufacturer's official datasheet to ensure correct packaging and compliance status. Confirm RoHS and REACH material composition declarations are available for the exact part number variant. Cross-reference the pinout and thermal characteristics with the intended PCB footprint before procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring 500 V blocking capability and 4 A current handling. Ensure the application involves significant inrush currents at startup or potential short-circuit scenarios. Verify that the 50 W power dissipation rating aligns with the thermal management strategy. Consider the 4 MHz frequency limit for switching speed requirements.

Single Bipolar Transistors Part Context

The BUH50 belongs to onsemi's SWITCHMODE family of NPN silicon planar power transistors. These devices utilize advanced die technology optimized for high-voltage power switching. The series targets efficient operation in lighting and power conversion systems where reliability under stress conditions is critical.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not provided in the source documentation.