BUK4D38-20PH

$0.46

Description：SMALL SIGNAL MOSFETS FOR AUTOMOT
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7d9c9dd4d375 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：SMALL SIGNAL MOSFETS FOR AUTOMOT
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
Rds On (Max) @ Id, Vgs：33mOhm @ 6A, 8V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1025 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 19W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK4D38-20PH

Overview

The BUK4D38-20P is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates with a drain-source voltage of -20 V and a continuous drain current of -18 A at 25 °C. The device features a maximum on-state resistance of 38 mΩ at VGS = -4.5 V. It supports an extended junction temperature range up to 175 °C and includes ESD protection exceeding 1 kV HBM. The component is housed in a DFN2020MD-6 (SOT1220) leadless package.

Feature Summary

AEC-Q101 qualified for automotive applications
Side wettable flanks enable optical solder inspection
Trench MOSFET technology provides fast switching characteristics

Applications

DC to DC conversion
High-speed line driver
High-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration, such as reel or cut tape options. Confirm that the requested part number matches the standard product data sheet specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a P-channel MOSFET with low on-resistance and high thermal stability. Ensure the gate drive voltage aligns with the specified -4.5 V threshold for optimal conduction performance. Verify PCB layout accommodates the exposed drain pad for effective heat dissipation within the DFN2020MD-6 package constraints.

Part Context

This device belongs to Nexperia's portfolio of Trench MOSFET products designed for power switching applications. It utilizes advanced trench gate technology to achieve low conduction losses while maintaining robust avalanche ruggedness. The component is suitable for environments demanding high reliability and extended operating temperatures.