BUK4D38-20PZ

$0.14

Description：BUK4D38-20P/SOT1220/DFN2020MD-
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:29f06cac816f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：BUK4D38-20P/SOT1220/DFN2020MD-
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
Rds On (Max) @ Id, Vgs：33mOhm @ 6A, 8V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1025 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 19W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK4D38-20PZ

Overview

The BUK4D38-20PZ is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) leadless surface-mount package. The device supports a drain-source voltage of -20 V and a continuous drain current of -18 A at 25 °C solder point temperature. Key electrical parameters include a maximum on-state resistance of 38 mΩ, a total gate charge of 16 nC, and a power dissipation rating of 19 W. It operates within an extended junction temperature range up to 175 °C.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
Side wettable flanks enable optical solder inspection
Extended thermal capability with a 175 °C junction temperature rating
ESD protection exceeding 1 kV HBM

Applications

DC to DC conversion
High-side load switch
High-speed line driver
Switching circuits

Procurement Notes

Verify the specific suffix 'Z' against official Nexperia documentation to confirm if it denotes a distinct tape-and-reel variant or packaging specification compared to the standard BUK4D38-20P. Ensure the ordering code matches the required reel quantity and handling specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a compact, thermally efficient P-channel switch. The low on-resistance and high current capacity suit power management tasks. Verify that the gate drive voltage levels are compatible with the specified threshold characteristics and that the PCB layout accommodates the DFN2020MD-6 footprint for optimal heat dissipation.

Part Context

This part belongs to Nexperia's medium-power Trench MOSFET portfolio designed for space-constrained applications. The DFN2020MD-6 package provides a small form factor with enhanced thermal performance through side-wettable flanks. It targets industries demanding robust discrete semiconductors, including automotive and industrial electronics.

Replacement Considerations

Direct substitutes must match the P-channel polarity, -20 V rating, and DFN2020MD-6 package. Cross-reference with other Nexperia BUK4D series parts having similar RDS(on) and current ratings. Verify pinout compatibility and thermal resistance values when replacing with devices from other manufacturers.