ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 50A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：9.8mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：30.5 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1760 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：80W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The BUK6209-30C,118 is an N-channel TrenchMOS intermediate level Field-Effect Transistor (FET) manufactured by Nexperia. It is housed in a TO-252-3 (DPAK) surface-mount package. Key electrical parameters include a drain-to-source voltage (Vds) of 30 V and a continuous drain current (Id) of 50 A at Ta. The device features a maximum on-state resistance (RDS(on)) of 5 mΩ at VGS = 10 V. Thermal characteristics specify a total power dissipation of 80 W at Ta. The component utilizes Trench MOS technology for enhanced performance.
Feature Summary
- Utilizes Trench MOS technology for improved switching efficiency and low conduction losses.
- Designed as an intermediate level FET suitable for robust power switching applications.
- Housed in a DPAK plastic surface-mounted package for efficient thermal management.
Applications
- Low-side load switch circuits
- General purpose switching applications
- Power management modules
Procurement Notes
Verify the specific ordering code suffix to ensure correct packaging configuration. Confirm RoHS compliance status and lead time requirements with authorized distributors prior to purchase. Ensure storage conditions align with manufacturer guidelines to maintain device integrity during handling and assembly processes.
Selection Notes
Select this component when a 30 V N-channel MOSFET with high current capability is required. The low RDS(on) value supports efficient power conversion. Verify that the thermal design accommodates the specified power dissipation limits under operating conditions. Ensure gate drive voltages remain within safe operational areas defined in the datasheet.
Part Context
This part belongs to the Nexperia BUK6 series of N-channel TrenchMOS FETs. These devices are engineered for medium-power applications requiring reliable switching performance. The series offers various voltage and current ratings to suit different circuit demands while maintaining compatibility with standard surface-mount assembly processes.
Replacement Considerations
Check for direct substitutes within the same Nexperia family with compatible pinouts and electrical specifications. Verify that alternative components meet the same voltage, current, and thermal requirements. Ensure package dimensions match existing PCB footprints to avoid mechanical integration issues.
