ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 55V 78A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：4000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：128W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The BUK6210-55C is an N-channel TrenchMOS intermediate level Field-Effect Transistor designed for high-performance automotive applications. It features a 55 V drain-source voltage rating and supports a continuous drain current of 78 A at 25 °C mounting base temperature. The device delivers a maximum total power dissipation of 128 W and exhibits a typical on-state resistance of 9.6 mΩ at VGS = 10 V. Qualified to the AEC-Q101 standard, it operates with junction temperatures up to 175 °C and includes avalanche ruggedness rated at 94 mJ.
Feature Summary
- AEC-Q101 qualified for high-reliability automotive environments
- Advanced TrenchMOS technology for optimized switching performance
- Extended thermal capability supporting junction temperatures up to 175 °C
- Compatible with standard and logic-level gate drive sources
Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component status remains active in the latest Nexperia product data sheet before finalizing designs. Ensure compliance with the absolute maximum ratings regarding pulse duration and accumulated stress limits during application testing.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with moderate voltage ratings. The DPAK package offers efficient thermal management for power dissipation needs. Consider the gate charge characteristics and threshold voltage variations across temperature ranges when designing the driver circuitry for optimal switching efficiency.
Part Context
This part belongs to Nexperia's portfolio of N-channel enhancement mode MOSFETs utilizing TrenchMOS technology. It is specifically engineered as an intermediate level FET suitable for demanding automotive loads. The SOT428 (DPAK) package provides a compact surface-mount solution with a dedicated mounting base connected to the drain for improved heat transfer.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters carefully when evaluating alternatives.
