BUK6213-30A,118

$0.25

Description：TRANSISTOR >30MHZ
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:e62f8d438679 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR >30MHZ
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1986 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：102W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK6213-30A,118

Overview

The BUK6213-30A is an intermediate level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 30 V and a continuous drain current of 55 A at 25 °C mounting base temperature. The device supports a total power dissipation of 102 W and operates with junction temperatures up to 175 °C. Key electrical characteristics include a maximum on-state resistance of 13 mΩ at VGS = 10 V and ID = 10 A, and a non-repetitive avalanche energy rating of 267 mJ.

Feature Summary

Qualified for automotive critical applications in compliance with AEC Q101 standards
Compatible with logic or standard level gate drive sources
Designed for thermally demanding environments with a 175 °C operating rating

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component status remains active for production use. Ensure design parameters align with the absolute maximum ratings provided in the official datasheet. Cross-reference thermal management requirements against the specified junction-to-mounting base resistance values.

Selection Notes

Select this component for designs requiring robust performance in automotive environments. The intermediate level gate drive compatibility simplifies driver circuit design. Evaluate thermal constraints carefully, as continuous current is limited by bondwires rather than just chip rating. Ensure the application voltage does not exceed the 30 V drain-source limit under all operating conditions.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode FETs. It utilizes advanced trench technology to achieve low on-state resistance and high current handling capabilities within a DPAK plastic package. The product line is specifically engineered to meet the rigorous reliability standards required for modern automotive electronic control units and power distribution systems.