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Product Detailed Parameters
- Description：MOSFET N-CH 75V 57A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：61.8 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：3900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：128W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The Nexperia BUK6215-75C,118 is an N-channel TrenchMOS FET designed for high-performance automotive applications. It features a 75V drain-source voltage rating and supports continuous drain currents up to 57A at 25°C mounting base temperature. The device exhibits a maximum on-state resistance of 15mΩ at VGS=10V and ID=15A. Total power dissipation reaches 128W under standard thermal conditions. It operates within a junction temperature range of -55°C to 175°C and complies with AEC-Q101 standards.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Compatible with logic and standard level gate drive sources
- Suitable for thermally demanding environments due to 175°C rating
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Engine management
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets current RoHS compliance requirements as specified in the latest product data sheet. Ensure design parameters align with the absolute maximum ratings provided by Nexperia to prevent device stress or failure during operation.
Selection Notes
Select this component for applications requiring robust switching capabilities in automotive environments. Consider the low on-state resistance for minimizing conduction losses. Evaluate thermal management strategies based on the specified thermal resistance values. Verify compatibility with existing gate drive circuits given the logic and standard level gate drive support.
Part Context
This part belongs to the BUK6 series of N-channel TrenchMOS FETs from Nexperia. These devices utilize advanced trench technology to deliver high current handling and low conduction losses. The series is specifically engineered for automotive use, ensuring reliability under harsh operating conditions and strict quality standards defined by automotive industry regulations.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and electrical characteristics carefully before implementation.
