ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 75V 22A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：46mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21.4 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1.28 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The BUK6240-75C,118 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It operates with a drain-source voltage of 75 V and supports a continuous drain current of 22 A at 25 °C mounting base temperature. The device features a typical on-state resistance of 46 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 60 W at 25 °C. It includes internal source-drain diode characteristics with a reverse recovery time of 42 ns. The component is qualified to AEC-Q101 standards and supports junction temperatures up to 175 °C.
Feature Summary
- AEC Q101 compliant for high-performance automotive applications
- Suitable for standard and logic level gate drive sources
- Operates in thermally demanding environments due to 175 °C rating
Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring intermediate-level gate drive compatibility alongside robust avalanche ruggedness. The DPAK package facilitates efficient thermal management through the mounting base connection. Ensure gate drive voltages align with the specified threshold ranges to optimize switching performance and minimize conduction losses during operation.
Part Context
This part belongs to Nexperia's portfolio of N-channel enhancement mode Field-Effect Transistors utilizing advanced TrenchMOS technology. Originally developed under NXP Semiconductors, these devices are engineered for reliability in critical automotive sectors. The product line emphasizes low on-state resistance and high current handling capabilities within compact plastic packages.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capacities, and package dimensions to ensure functional equivalence without design modification.
