BUK6246-75C,118

Description：MOSFET N-CH 75V 22A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:fb780b6d29df Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 22A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：21.4 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1280 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：60W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK6246-75C,118

Overview

The BUK6246-75C is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology, designed for intermediate level gate drive applications. It features a drain-source voltage of 75 V and a continuous drain current of 22 A at 25 °C mounting base temperature. The device supports a total power dissipation of 60 W and operates with a junction temperature up to 175 °C. Key electrical characteristics include a maximum on-state resistance of 46 mΩ at VGS = 10 V and ID = 10 A. It is qualified to the AEC-Q101 standard for automotive use.

Feature Summary

Compliant with AEC-Q101 standards for high-performance automotive applications
Capable of operation in thermally demanding environments due to a 175 °C rating
Suitable for both standard and logic level gate drive sources

Applications

12 V and 24 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the application environment remains within the specified thermal limits and voltage ratings. Ensure compatibility with the intended gate drive source levels before integration into the final design.

Selection Notes

Select this component when an N-channel MOSFET with a 75 V rating and 22 A continuous current capability is required. Consider the DPAK (SOT428) package constraints for thermal management. Verify that the gate drive voltage aligns with the specified threshold and on-state resistance conditions.

Part Context

This part belongs to Nexperia's portfolio of N-channel TrenchMOS FETs. It is specifically engineered for automotive-grade reliability and intermediate-level switching tasks. The device integrates advanced silicon technology to provide robust performance in power switching applications.