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Product Detailed Parameters
- Description：MOSFET N-CH 40V 90A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：3720 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：128W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK626R2-40C is an N-channel TrenchMOS intermediate level enhancement mode Field-Effect Transistor (FET) designed for high-performance automotive applications. It operates with a drain-source voltage of 40 V and supports continuous drain currents up to 90 A at 25 °C mounting base temperature. The device delivers total power dissipation of 128 W under standard conditions, with a maximum on-state resistance of 6.2 mΩ at VGS = 10 V and ID = 15 A. It features a junction temperature rating of 175 °C and complies with the AEC-Q101 standard.
Feature Summary
- Compliant with AEC-Q101 standards for automotive reliability
- Compatible with standard and logic level gate drive sources
- Operates in thermally demanding environments with a 175 °C junction rating
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm package type and tape/reel specifications. Confirm that the component meets current RoHS and REACH compliance requirements for your region. Ensure design margins account for the absolute maximum ratings, particularly regarding avalanche energy limits and thermal resistance characteristics during operation.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with intermediate gate drive levels. The DPAK package provides effective thermal management for high-current applications. Consider the 175 °C junction temperature capability for environments where standard components may exceed their thermal limits. Verify compatibility with existing gate driver voltages given the specified threshold voltage range.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs, utilizing advanced trench technology for low on-resistance and efficient switching. The BUK626R2-40C specifically targets automotive markets, offering durability and performance suitable for harsh operating conditions. It is housed in a SOT428 (DPAK) plastic surface-mounted package, providing a balance between electrical performance and thermal dissipation capabilities.
Replacement Considerations
Consult official Nexperia substitution guides or datasheets for verified equivalent parts. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original specification.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The maximum non-repetitive drain-source avalanche energy is 113 mJ under conditions of ID = 90 A, Vsup ≤ 40 V, RGS = 50 Ω, VGS = 10 V, and initial junction temperature of 25 °C.
How does the on-state resistance vary with junction temperature?
The normalized drain-source on-state resistance increases with junction temperature. At 175 °C, the maximum on-state resistance can reach approximately 13 mΩ when tested at VGS = 10 V and ID = 15 A.
