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Product Detailed Parameters
- Description：MOSFET N-CH 30V 120A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：229 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：14.964 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK652R0-30C,127 is an N-channel TrenchMOS intermediate level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. It utilizes advanced TrenchMOS technology to provide enhanced performance in a plastic package. The device is designed for robust switching applications with a maximum drain-source voltage of 30 V and a continuous drain current rating of 120 A at case temperature. It features low on-resistance characteristics typical of the TrenchMOS architecture, ensuring efficient power handling. The component is housed in a TO-220AB through-hole package, suitable for high-power thermal management requirements.
Feature Summary
- Advanced TrenchMOS technology for improved switching efficiency
- High current capability with 120 A continuous drain current rating
- Robust 30 V breakdown voltage for intermediate level applications
- Through-hole TO-220AB package for effective heat dissipation
Applications
- Relay driver circuits
- Low-side load switch implementations
- General-purpose switching circuits
Procurement Notes
Verify the specific ordering suffix ,127 to confirm the TO-220AB through-hole packaging variant. Ensure compatibility with existing board layouts requiring this specific mechanical form factor. Confirm that the 30 V voltage rating and 120 A current capacity meet the design's electrical requirements before procurement. Check for any recent Product Change Notifications regarding marking or labeling updates.
Selection Notes
Select this component when a high-current, low-voltage N-channel MOSFET is required in a through-hole configuration. The TrenchMOS technology offers advantages over standard planar devices in terms of on-resistance and switching speed. Consider the thermal resistance of the TO-220AB package and ensure adequate heatsinking is available for the intended power dissipation levels in the application.
Part Context
This part belongs to Nexperia's BUK series of N-channel TrenchMOS FETs, which are designed for intermediate power applications. The series leverages trench gate technology to achieve lower specific on-resistance compared to conventional MOSFETs. These devices are commonly used in automotive and industrial applications where reliability and efficiency are critical. The BUK652R0-30C represents a specific voltage and current class within this broader product family.
Replacement Considerations
Direct substitutes may include other 30 V N-channel MOSFETs in TO-220AB packages from Nexperia or other manufacturers, provided they match the current rating and pinout. Verify that alternative components have comparable on-resistance and thermal characteristics. Cross-reference datasheets for absolute maximum ratings to ensure no derating issues arise during replacement.
