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Product Detailed Parameters
- Description：PFET, 120A I(D), 30V, 0.0035OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：168 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：10.918 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：263W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK652R1-30C,127 is an N-channel TrenchMOS intermediate level Field-Effect Transistor (FET) manufactured by Nexperia. It features a 30 V drain-source voltage rating and supports a continuous drain current of 120 A at case temperature. The device exhibits a maximum on-state resistance of 2.1 mΩ. Packaged in a TO-220AB through-hole housing, it is designed for high-efficiency power switching applications with low conduction losses.
Feature Summary
- Utilizes advanced TrenchMOS technology for enhanced performance
- Optimized for intermediate level gate drive requirements
- Designed to minimize switching and conduction losses
Applications
- Industrial motor control systems
- DC-to-DC converter circuits
- Server power supply units
Procurement Notes
Verify the specific ordering code suffix against official Nexperia documentation to confirm package type and tape/reel specifications. Ensure compatibility with thermal management designs given the TO-220AB form factor. Cross-reference datasheet revisions to confirm pinout consistency for existing PCB layouts.
Selection Notes
Select this component for applications requiring robust N-channel MOSFET performance at 30 V with high current handling capabilities. The TO-220AB package facilitates effective heat dissipation for through-hole mounting solutions. Evaluate thermal resistance parameters relative to the specific enclosure design to ensure reliable operation under load.
Part Context
This part belongs to the Nexperia BUK65 series of N-channel TrenchMOS FETs. The series is engineered for industrial and communications environments, offering a balance of low on-resistance and fast switching speeds. The TO-220AB variant provides a standardized mechanical interface for power electronics assemblies.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Direct replacements must match the 30 V rating, TO-220AB package, and electrical characteristics to maintain circuit integrity without redesign.
