BUK654R0-75C,127

$1.16

Description：PFET, 120A I(D), 75V, 0.006OHM,
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:a16c909ef1f2 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：PFET, 120A I(D), 75V, 0.006OHM,
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：234 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：15.45 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：306W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK654R0-75C,127

Overview

The BUK654R0-75C is an N-channel TrenchMOS FET designed for intermediate level gate drive applications. It utilizes advanced TrenchMOS technology within a TO-220AB plastic package (SOT78A). The device meets AEC-Q101 standards for automotive use and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 75 V, a continuous drain current of 120 A at 25 °C mounting base temperature, and a total power dissipation of 306 W. The typical on-state resistance is 4.2 mΩ at 25 °C.

Feature Summary

Compliant with AEC-Q101 qualification standards for high-performance automotive environments
Capable of operation in thermally demanding conditions due to a 175 °C maximum junction temperature rating
Optimized for intermediate level gate drive sources using advanced TrenchMOS technology

Applications

12 V and 24 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package variant and tape/reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure thermal management design accounts for the specified junction-to-mounting base thermal resistance values under actual operating conditions.

Selection Notes

Select this component for designs requiring robust switching performance in automotive power circuits. Evaluate the 75 V breakdown voltage and 120 A current capability against peak load requirements. Consider the TO-220AB package for heatsink mounting efficiency. Verify gate drive compatibility with the specified threshold voltage range and total gate charge characteristics.

Part Context

This part belongs to the Nexperia BUK series of N-channel TrenchMOS FETs. These devices are engineered for general-purpose power switching and automotive applications. The product line emphasizes low conduction losses and high reliability through specialized trench gate architecture.