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Product Detailed Parameters
- Description：MOSFET N-CH 40V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：15100 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK661R9-40C is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It operates with a drain-source voltage of 40 V and supports a continuous drain current of 120 A at a mounting base temperature of 25 °C. The device features a typical on-state resistance of 1.9 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 306 W under the same thermal conditions. It includes avalanche ruggedness with a non-repetitive energy rating of 1.02 J. The component functions within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- Compliant with AEC-Q101 standards for automotive reliability
- Optimized for intermediate level gate drive sources
- Capable of operation in thermally demanding environments up to 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure design margins account for the absolute maximum ratings defined in the datasheet, particularly regarding pulsed drain current and avalanche energy limits during transient events.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with intermediate gate drive compatibility. The low on-state resistance minimizes conduction losses in high-current paths. Verify that the application's thermal management strategy can maintain the mounting base temperature within limits to sustain the specified 120 A continuous current rating without exceeding the 175 °C junction temperature threshold.
Part Context
This device utilizes Nexperia's advanced TrenchMOS technology to deliver enhanced performance in a plastic D2PAK (SOT404) surface-mounted package. The package includes a dedicated mounting base connected to the drain for efficient heat dissipation. The product is specifically qualified for automotive environments, ensuring durability under varying thermal and electrical stresses common in vehicle power distribution networks.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal resistance values when evaluating potential replacements to ensure mechanical and electrical compatibility within the existing circuit layout.
