BUK663R5-30C,118

$0.44

Description：MOSFET N-CH 30V 100A D2PAK
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:09c99aea0f36 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 100A D2PAK
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Download product information

BUK663R5-30C,118

Overview

The BUK663R5-30C,118 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a drain-source voltage of 30 V and a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device supports a total power dissipation of 158 W under the same conditions. Its on-state resistance is specified between 2.9 mΩ and 3.5 mΩ at VGS = 10 V and ID = 25 A. The component operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Supports standard and logic level gate drive sources
Rated for thermally demanding environments up to 175 °C

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for circuits requiring robust avalanche ruggedness and low conduction losses in automotive power stages. Ensure the gate drive voltage aligns with the specified threshold characteristics for optimal RDSon performance. Consider the thermal resistance from junction to mounting base when designing heat dissipation strategies for high-current operations.

Part Context

This part belongs to the BUK66 series of N-channel TrenchMOS FETs manufactured by Nexperia (formerly NXP Semiconductors). It utilizes advanced TrenchMOS technology to achieve low on-resistance and high efficiency. The device is housed in a D2PAK plastic surface-mounted package, suitable for automated assembly processes in industrial and automotive electronics manufacturing.