BUK664R4-55C,118

$1.24

Description：MOSFET N-CH 55V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:427059b08ecf Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：4.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：124 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：7750 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：204W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK664R4-55C,118

Overview

The BUK664R4-55C is an N-channel TrenchMOS intermediate level FET designed for automotive critical applications. It features a 55 V drain-source voltage rating and supports continuous drain currents up to 100 A at a mounting base temperature of 25 °C. The device offers low on-state resistance, typically 4.9 mΩ at VGS = 10 V and ID = 25 A. It operates within a junction temperature range of -55 °C to 175 °C and includes avalanche ruggedness with a non-repetitive energy rating of 263 mJ.

Feature Summary

Compliant with AEC Q101 standards for automotive reliability
Utilizes advanced TrenchMOS technology for enhanced performance
Rated for thermally demanding environments with a 175 °C junction temperature limit

Applications

12 V and 24 V automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure package and marking consistency. Confirm that the component meets the required AEC-Q101 qualification status for the intended automotive application. Review the latest product data sheet revision history for any updates to electrical characteristics or thermal parameters before finalizing design specifications.

Selection Notes

Select this component for high-current switching applications requiring robust automotive-grade reliability. Ensure the gate drive source is suitable for intermediate level operation. Verify thermal management capabilities to maintain junction temperatures within the specified 175 °C limit under peak load conditions. Consider the D2PAK package constraints for continuous current ratings based on mounting base temperature.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode Field-Effect Transistors. It is specifically engineered for intermediate level gate drive sources in plastic packages. The series is designed to meet the rigorous demands of automotive critical applications, offering a balance of low on-resistance and high current handling capability.