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The BUK6D120-60P is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020MD-6 (SOT1220) plastic package measuring 2 x 2 x 0.65 mm. The device supports an extended junction temperature range up to 175 °C and features side wettable flanks for optical solder inspection. Qualified under AEC-Q101, it offers a drain-source voltage of -60 V, a continuous drain current of -8 A at 25 °C, and a total power dissipation of 15 W.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and variant selection. Confirm that the component meets all required automotive qualification standards before integration into final designs. Cross-reference the datasheet revision history to ensure the latest specifications are utilized during the procurement process.
Select this component when a compact P-channel solution with high thermal tolerance is required. The small DFN2020MD-6 package is suitable for space-constrained designs. Ensure the application operates within the specified -60 V drain-source voltage limits and accounts for the thermal resistance characteristics provided in the datasheet for proper heat management.
This part belongs to Nexperia's portfolio of medium-power surface-mount devices designed for robust switching applications. The DFN2020MD-6 package provides a balance between thermal efficiency and footprint reduction. As an automotive-qualified device, it is engineered to withstand the rigorous environmental conditions typical of modern vehicle electronics systems.
BUK6D120-60EX