BUK6D120-60PZ

$0.14

Description：BUK6D120-60P/SOT1220/SOT1220
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:0c67d41863fa Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：BUK6D120-60P/SOT1220/SOT1220
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：120mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：724 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 15W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK6D120-60PZ

Overview

The BUK6D120-60PZ is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a leadless DFN2020MD-6 (SOT1220) plastic package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of -60 V and a continuous drain current of -8 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 120 mΩ, total power dissipation of 15 W, and an operating junction temperature range up to 175 °C.

Feature Summary

AEC-Q101 qualified for automotive applications
Side wettable flanks enable optical solder inspection
Trench MOSFET technology for enhanced performance

Applications

Relay driver
High-speed line driver
High-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the component meets all required automotive qualification standards before integration into final designs. Ensure thermal management aligns with specified junction-to-ambient resistance values.

Selection Notes

Select this component for high-density circuit designs requiring small form factors. Consider the extended temperature range and low profile when space constraints are critical. Evaluate the on-state resistance and gate charge characteristics against switching frequency requirements to optimize efficiency.

Part Context

This part belongs to the Nexperia BUK6D series of P-channel MOSFETs. These devices are designed for medium-power surface-mount applications. The DFN2020MD-6 package provides a compact footprint suitable for modern electronic assemblies requiring efficient heat dissipation and reliable connections.