BUK6D16-30EX

$0.60

Description：MOS DISCRETES
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5a56c329d7d1 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOS DISCRETES
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.4A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16.8mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：553 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 15W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK6D16-30EX

Overview

The BUK6D16-30EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020MD-6 (SOT1220) plastic package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of 30 V and a continuous drain current of 23 A at 25 °C case temperature. Key electrical parameters include a maximum on-state resistance of 16.8 mΩ at VGS = 10 V and 25 °C, with a total power dissipation capability of 15 W under the same conditions. It features an extended junction temperature range up to 175 °C and is qualified to AEC-Q101 standards.

Feature Summary

Trench MOSFET technology for enhanced performance
Leadless ultra-thin SMD plastic package with side wettable flanks for optical solder inspection
Extended operating temperature range up to 175 °C junction temperature
Qualified to AEC-Q101 automotive standards

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration. The 'EX' suffix indicates tape and reel packaging; ensure this matches design requirements. Confirm availability through authorized distributors as supply status may vary. Validate component authenticity via manufacturer channels before integration into production systems.

Selection Notes

Select this component for designs requiring a compact, thermally efficient N-channel MOSFET with automotive qualification. The low on-state resistance and high current capability suit low-side switching applications. Ensure thermal management strategies align with the specified thermal resistance values for both junction-to-ambient and junction-to-solder point paths to maintain reliability within the 175 °C limit.

Part Context

This part belongs to Nexperia's portfolio of medium power surface-mounted devices designed for space-constrained applications. The DFN2020MD-6 package provides a small footprint while maintaining adequate thermal performance through exposed drain pads. It represents a solution bridging general-purpose switching needs with automotive-grade reliability requirements.

Replacement Considerations

Direct pin-compatible replacements should be verified against the latest Nexperia datasheets. Consider alternative N-channel MOSFETs in the SOT1220 package with comparable VDS, ID, and RDS(on) specifications if sourcing constraints exist.