BUK6D230-80EX

$0.36

Description：MOSFET N-CH 80V 1.9A/5.1A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7e77374b6bea Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 1.9A/5.1A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：1.9A (Ta), 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：230mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：215 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 15W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK6D230-80EX

Overview

The BUK6D230-80EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) leadless plastic package with side wettable flanks. The device supports a drain-source voltage of 80 V and a continuous drain current of 5.1 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 230 mΩ, a gate-source voltage rating of ±20 V, and a total power dissipation of 15 W. It features an extended junction temperature range up to 175 °C and includes ElectroStatic Discharge protection exceeding 2 kV HBM.

Feature Summary

Extended thermal capability supporting operation up to a 175 °C junction temperature.
Side wettable flanks enable optical solder inspection for quality assurance.
Robust electrostatic discharge protection rated above 2 kV under Human Body Model conditions.
Qualified according to the AEC-Q101 automotive reliability standard.

Applications

LED lighting systems
High-speed line drivers
Low-side load switches
General switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape configuration. Confirm that the component meets all required environmental standards and RoHS compliance specifications for your target market before finalizing procurement orders.

Selection Notes

Select this component when a compact surface-mount solution is required for medium-power applications. The DFN2020MD-6 package offers excellent thermal performance through its exposed drain pad. Ensure the design accommodates the 80 V breakdown voltage and utilizes the low on-resistance characteristics for efficient switching operations.

Part Context

This part belongs to the Nexperia BUK6D series of N-channel Trench MOSFETs. The series is designed for general-purpose switching applications requiring high reliability. The DFN2020MD-6 package provides a small footprint suitable for space-constrained designs while maintaining robust thermal dissipation capabilities.

Replacement Considerations

Consult official Nexperia cross-reference lists for verified substitutes. Verify pinout compatibility and thermal resistance values when replacing components in existing designs.