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The BUK6D30-40EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a 40 V drain-source voltage range and supports up to 18 A continuous drain current at 25 °C solder point temperature. The device features a maximum on-state resistance of 30 mΩ at 25 °C, rising to 57 mΩ at 175 °C. Total power dissipation reaches 19 W under standard thermal conditions. The component is housed in a leadless DFN2020MD-6 (SOT1220) package with side wettable flanks.
Verify the specific suffix 'EX' against the official Nexperia ordering information table to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the procurement documentation matches the exact part number variant required for your assembly process. Cross-reference the marking code '6K' to validate physical unit authenticity upon receipt.
Select this component when designing low-side switches requiring high thermal endurance up to 175 °C. The DFN2020MD-6 package provides a compact footprint suitable for space-constrained PCB layouts. Verify that the gate drive voltage meets the logic level requirements for optimal RDS(on) performance. Consider the transient thermal impedance characteristics for pulsed load applications.
This device belongs to the BUK6D series of N-channel Trench MOSFETs manufactured by Nexperia. The series utilizes advanced trench technology to achieve low conduction losses within a small surface-mount form factor. These components are engineered for robust performance in demanding environments, combining high current handling capabilities with efficient thermal management through the specialized leadless package design.
BUK6D30-40E is the base product designation corresponding to this component.