BUK6D72-30EX

$0.37

Description：MOSFET N-CH 30V 4A/11A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3a3ee3555b59 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 4A/11A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta), 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：72mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：100 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 15W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK6D72-30EX

Overview

The BUK6D72-30EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology, housed in a DFN2020MD-6 (SOT1220) plastic package. It features a drain-source voltage of 30 V and a continuous drain current of 11 A at 25 °C case temperature. The device supports an extended junction temperature range up to 175 °C and includes side wettable flanks for optical solder inspection. It is qualified to the AEC-Q101 standard for automotive applications.

Feature Summary

AEC-Q101 qualified for automotive critical applications
Extended temperature range with a maximum junction temperature of 175 °C
Side wettable flanks enable optical solder joint inspection
Electrostatic Discharge protection exceeding 1 kV HBM

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment. Ensure compatibility with the specified DFN2020MD-6 footprint during the design phase.

Selection Notes

Select this component for designs requiring low on-state resistance and high thermal stability in compact spaces. The Trench MOSFET technology offers efficient switching performance suitable for power management tasks. Consider the 175 °C rating for environments with significant thermal constraints or high ambient temperatures.

Part Context

This part belongs to Nexperia's portfolio of N-channel Trench MOSFETs designed for medium-power surface-mount applications. The DFN2020MD-6 package provides a small form factor with enhanced thermal dissipation capabilities compared to standard packages. It is engineered to meet rigorous automotive reliability standards while maintaining cost-effectiveness for mass production.

Replacement Considerations

Check for direct substitutes within the same Nexperia family that share identical pinouts and electrical characteristics. Verify that any alternative component matches the 30 V rating and 11 A current capability. Ensure the replacement package type is compatible with existing PCB footprints and soldering profiles.