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Product Detailed Parameters
- Description：NEXPERIA BUK6E3R2-55C - 120A, 55
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：258 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：15300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK6E3R2-55C,127 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a 55 V drain-source voltage rating and supports continuous drain currents up to 120 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 3.2 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 306 W under standard thermal conditions. It operates within a junction temperature range of -55 °C to 175 °C and includes avalanche ruggedness rated at 724 mJ.
Feature Summary
- Qualified to the AEC-Q101 standard for use in demanding automotive environments.
- Optimized for intermediate level gate drive sources with low conduction losses.
- Capable of operation in thermally demanding environments due to a 175 °C junction temperature rating.
Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with intermediate gate drive compatibility. Ensure the application accounts for the package's thermal resistance characteristics to maintain junction temperatures within the specified 175 °C limit during peak load operations.
Part Context
This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology to achieve low on-state resistance. The I2PAK (SOT226) package provides a single-ended plastic housing with a mounting base connected to the drain, facilitating efficient heat dissipation for high-current automotive power management tasks.
Replacement Considerations
Direct substitutes include other Nexperia parts within the BUK6E series sharing identical pinouts and electrical ratings, such as the BUK6E3R2-55B or variants with different packaging suffixes like ,118, provided they meet the same AEC-Q101 qualification standards.
FAQ
What is the non-repetitive drain-source avalanche energy rating?
The device is rated for 724 mJ of non-repetitive drain-source avalanche energy under specific test conditions including ID = 120 A and Vsup ≤ 55 V.
How does the on-state resistance vary with gate-source voltage?
At VGS = 10 V, the maximum RDSon is 3.2 mΩ. This increases to 4.2 mΩ max at VGS = 5 V and 4.8 mΩ max at VGS = 4.5 V, all measured at ID = 25 A and Tj = 25 °C.
