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Product Detailed Parameters
- Description：MOSFET P-CH 30V 67A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2880 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：106W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK6Y12-30PX is a P-channel enhancement mode MOSFET manufactured by Nexperia USA Inc. utilizing TrenchMOS technology. It features a 30V drain-source voltage (Vdss) and a continuous drain current of 45A at case temperature. The device offers a maximum on-resistance of 12 milliohms at 10V gate drive. Qualified to AEC-Q101 standards, it operates within a junction temperature range of -55°C to 175°C and is housed in an LFPAK56 surface-mount package.
Feature Summary
- TrenchMOS technology for high thermal power dissipation
- Qualified to AEC-Q101 automotive standards
- Suitable for thermally demanding environments with 175°C rating
Applications
- Reverse battery protection
- Power management
- High-side load switch
- Motor drive
Procurement Notes
Verify the specific suffix 'PX' against the official Nexperia datasheet to confirm packaging details and exact electrical tolerances. Ensure the component meets AEC-Q101 requirements if used in automotive designs. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current availability and lead times before finalizing procurement plans.
Selection Notes
Select this component for applications requiring robust reverse battery protection or high-side switching in automotive systems. The low on-resistance minimizes conduction losses, while the 175°C junction temperature capability supports operation in thermally constrained enclosures. Verify that the logic-level gate drive requirements align with the system's control voltage levels.
Part Context
This device belongs to the BUK6Y series of P-channel MOSFETs from Nexperia. These components are engineered using TrenchMOS technology to deliver high efficiency and reliability. The series is specifically designed for automotive applications, offering superior thermal performance compared to standard plastic packages.
Replacement Considerations
Consult official Nexperia documentation for qualified substitutes. Potential alternatives may include other P-channel MOSFETs with similar voltage ratings and package types, such as those from the BUK6Y family or comparable LFPAK56 devices, provided they meet the same AEC-Q101 qualification standards.
