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Product Detailed Parameters
- Description：MOSFET P-CH 30V 41A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 8.6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1408 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：66W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK6Y20-30PX is a standard level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes High-Performance Automotive (HPA) TrenchMOS technology and is designed for automotive critical applications, meeting AEC-Q101 standards. The device operates with a maximum drain-source voltage of 30 V and features a low on-resistance suitable for efficient power switching. It is housed in a compact plastic package optimized for surface-mount assembly, ensuring reliability in thermally demanding environments with a junction temperature rating up to 175 °C.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards for critical applications
- Utilizes High-Performance Automotive (HPA) TrenchMOS technology for enhanced efficiency
- Suitable for standard level gate drive sources
- Rated for operation in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive systems
- General purpose power switch
- Motors, lamps and solenoids
Procurement Notes
Verify the specific suffix 'PX' against official Nexperia documentation to confirm exact packaging configuration, as ordering suffixes define tape and reel specifications rather than functional changes. Ensure the component meets the required AEC-Q101 grade for your target automotive application. Consult the manufacturer's longevity program for availability timelines before finalizing design-in decisions.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with standard logic-level gate drive compatibility. The HPA TrenchMOS technology offers advantages in thermal performance and conduction efficiency compared to standard MOSFETs. Consider the 175 °C junction temperature rating for high-temperature operational requirements typical in under-hood automotive electronics.
Part Context
This part belongs to Nexperia's portfolio of automotive-grade discrete semiconductors. It complements other components like the PMPB30XPE P-channel FET and PS MN6R0-30YL logic level MOSFET within their broader power management solutions. The product line supports the development of reliable power distribution and control systems for modern vehicles.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Generic replacements may not match the specific AEC-Q101 qualification or HPA TrenchMOS characteristics required for automotive safety-critical functions.
