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Product Detailed Parameters
- Description：MOSFET P-CH 40V 39A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1250 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：66W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The Nexperia BUK6Y24-40PX is a P-channel enhancement mode MOSFET utilizing Trench technology, housed in an LFPAK56 (Power-SO8) SMD plastic package. It features a drain-source voltage of -40 V and a continuous drain current of -39 A at 25 °C mounting base temperature. The device supports a total power dissipation of 66 W and operates within a junction temperature range of -55 °C to +175 °C. Key electrical characteristics include a maximum on-state resistance of 24 mΩ at VGS = -10 V and ID = -8.2 A, with a typical gate charge of 23 nC.
Feature Summary
- High thermal power dissipation capability suitable for thermally demanding environments
- Qualified to the AEC-Q101 standard for high-performance automotive applications
- Utilizes Trench MOSFET technology for enhanced performance
Applications
- Reverse battery protection
- Power management
- High-side load switch
- Motor drive
Procurement Notes
Verify the specific ordering suffix 'PX' against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the LFPAK56 package outline SOT669. Confirm that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements before finalizing procurement.
Selection Notes
Select this component for designs requiring robust reverse battery protection or high-side switching in automotive systems. The LFPAK56 package offers efficient thermal management via the exposed mounting base. Consider the -40 V rating and low on-state resistance for optimizing efficiency in 12V automotive power architectures where high current handling is necessary.
Part Context
This part belongs to Nexperia's NextPower L3 series of P-channel MOSFETs. It is designed specifically for automotive environments, meeting stringent quality standards. The product utilizes advanced Trench technology to achieve low RDS(on) while maintaining high current capabilities in a compact surface-mount footprint.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Do not assume compatibility based solely on pinout or voltage ratings; verify thermal resistance and dynamic characteristics.
