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The BUK6Y25-40PX is a P-channel enhancement mode MOSFET from Nexperia, utilizing TrenchMOS technology. It features a 40 V drain-source voltage rating and a continuous drain current of 39 A at case temperature. The device offers a low on-state resistance of 25 mΩ at 10 V gate drive. Packaged in an LFPAK56 (Power-SO8) surface-mount format, it supports an extended junction temperature range up to 175 °C and holds AEC-Q101 automotive qualification.
Verify the specific suffix 'PX' against the official Nexperia datasheet to confirm packaging details such as reel size or tape specifications. Ensure the component matches the LFPAK56 footprint requirements for your PCB layout. Confirm that the AEC-Q101 qualification aligns with your project's reliability standards before finalizing procurement.
Select this component for applications requiring robust P-channel switching with high current handling capabilities. The 25 mΩ on-resistance minimizes conduction losses, while the 175 °C rating provides thermal resilience in demanding environments. Consider the LFPAK56 package dimensions during mechanical design to ensure adequate clearance and thermal management.
This part belongs to Nexperia's BUK6Y series of P-channel MOSFETs designed for automotive and industrial power switching. The series leverages TrenchMOS technology to deliver low on-resistance and fast switching speeds within compact packages. These devices are engineered to meet the stringent reliability requirements of modern electronic systems.
The maximum operating junction temperature is +175 °C.
Yes, the device is qualified to the AEC-Q101 standard for automotive use.