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Product Detailed Parameters
- Description：MOSFET P-CH 60V 40A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：32mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2590 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：106W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK6Y32-60PX is a P-channel enhancement mode MOSFET manufactured by Nexperia USA Inc. utilizing TrenchMOS technology. It is housed in an LFPAK56 (Power SO8) surface-mount package and qualified to the AEC-Q101 standard for automotive reliability. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 33 A at case temperature, and a maximum on-resistance of 7.5 milliohms at 10 V gate drive. The device supports a junction temperature range from -55 °C to +175 °C with a power dissipation rating of 96 W.
Feature Summary
- Trench MOSFET technology providing low on-resistance and high thermal efficiency
- AEC-Q101 qualification ensuring suitability for demanding automotive environments
- LFPAK56 package design enabling high thermal power dissipation capability
Applications
- Reverse battery protection circuits
- High-side load switching applications
- Automotive power management systems
Procurement Notes
Verify the specific suffix 'PX' against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the component meets AEC-Q101 requirements for your target automotive application. Cross-reference the LFPAK56 footprint dimensions during PCB layout to guarantee mechanical compatibility.
Selection Notes
Select this component for designs requiring robust P-channel switching with high current handling capabilities. The 60 V rating suits standard automotive bus architectures. Consider the LFPAK56 thermal performance for space-constrained layouts where efficient heat dissipation is critical without additional heatsinking solutions.
Part Context
This part belongs to the Nexperia BUK6Y series of P-channel Trench MOSFETs. The series is engineered for high-performance automotive applications, combining advanced silicon technology with optimized package thermal characteristics. It complements N-channel counterparts in full-bridge or half-bridge driver configurations.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Generic replacements may not match the AEC-Q101 qualification status or the specific thermal resistance profile of the LFPAK56 package.
