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Product Detailed Parameters
- Description：MOSFET P-CH 60V 23A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：57mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：66W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK6Y57-60PX is a P-channel enhancement mode MOSFET manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology to deliver high-performance switching capabilities in an LFPAK56 (Power-SO8) surface-mount package. The device is rated for a drain-source voltage of 60V and supports a continuous drain current of 23A at ambient temperature, with a maximum power dissipation of 66W. It operates within a junction temperature range of -55°C to +175°C and features a gate charge of 24 nC. The component is qualified to the AEC-Q101 standard, ensuring reliability for demanding automotive environments.
Feature Summary
- High thermal power dissipation capability suitable for thermally demanding environments
- TrenchMOS technology providing low on-resistance and fast switching performance
- Qualified to AEC-Q101 standards for high-reliability automotive applications
Applications
- Reverse battery protection circuits
- High-side load switch configurations
- Automotive power management systems
Procurement Notes
Verify the specific suffix '60PX' corresponds to the required LFPAK56 package and AEC-Q101 qualification level. Confirm that the 60V rating and 23A current capacity align with the target circuit design requirements. Ensure compatibility with the intended operating temperature range up to 175°C. Cross-reference the datasheet revision date to ensure access to the latest electrical characteristics and mechanical drawings before finalizing procurement orders.
Selection Notes
Select this component when a robust P-channel solution is required for high-current automotive loads. The LFPAK56 package offers superior thermal performance compared to standard SO-8 packages. Consider the 60V rating for systems operating near or below this threshold. Verify that the gate drive voltage levels are compatible with the logic-level requirements of the driving controller. Evaluate the 24 nC gate charge against switching frequency constraints to manage drive losses effectively.
Part Context
This part belongs to Nexperia's BUK6Y series of high-reliability P-channel MOSFETs designed specifically for automotive electronics. The series emphasizes durability under harsh conditions, utilizing advanced TrenchMOS technology to minimize conduction losses. These devices are engineered to meet stringent automotive quality standards, making them suitable for critical power distribution tasks where failure is not an option.
Replacement Considerations
Direct substitutes include other AEC-Q101 qualified P-channel MOSFETs in the LFPAK56 package with comparable 60V/23A ratings. Verify pinout compatibility and thermal resistance values before substitution. Check if alternative parts offer improved gate charge characteristics for higher frequency applications.
