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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A DPAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2453 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：167W (Tc)
- Operating Temperature：-55°C ~ 185°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7210-55B/C1,118 is an N-channel MOSFET manufactured by NXP USA Inc. It features a drain-to-source voltage (Vdss) of 60V and a maximum gate-source voltage (Vgs) of ±20V. The device supports a continuous drain current (Id) of 300mA at 25°C ambient temperature. Key electrical specifications include a power dissipation rating of 167W at case temperature and an operating junction temperature range from -55°C to 185°C. The component utilizes Metal Oxide Semiconductor technology and is designed for surface mount applications.
Feature Summary
- N-channel MOSFET construction utilizing Metal Oxide Semiconductor technology
- Surface mount design suitable for automated assembly processes
- Wide operating junction temperature range extending up to 185°C
Applications
- General purpose switching applications
- Low voltage power management circuits
- Automotive electronic modules requiring robust thermal performance
Procurement Notes
Verify the specific suffix C1,118 against official NXP documentation to confirm tape and reel packaging details. Ensure compatibility with DPAK footprint requirements during PCB layout. Confirm RoHS3 compliance status through the manufacturer's latest certification documents before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage N-channel MOSFET with moderate current handling capabilities is required. Consider the 60V Vdss rating for systems operating below this threshold. Evaluate the 300mA continuous drain current limit against peak load requirements. Verify that the DPAK package fits within the available board space constraints.
Part Context
This part belongs to the BUK7210 series of single FETs produced by NXP Semiconductors. The series typically includes variants optimized for different voltage and current ratings within the low-voltage domain. The DPAK package provides a balance between thermal performance and compact form factor for surface mount designs.
Replacement Considerations
DigiKey lists this product as discontinued. Consult official substitute part number lists provided by NXP or Nexperia for direct replacements. Ensure any alternative maintains identical pinout configuration and electrical parameters.
