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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2453 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：167W (Tc)
- Operating Temperature：-55°C ~ 185°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7210-55B,118 is an N-channel TrenchMOS standard level FET utilizing High-Performance Automotive technology. It features a 55 V drain-source voltage and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 10 mΩ at VGS = 10 V and ID = 25 A. It supports junction temperatures up to 185 °C and total power dissipation of 167 W. Packaged in SOT428 (DPAK), it includes avalanche ruggedness rated at 173 mJ.
Feature Summary
- High-Performance Automotive TrenchMOS technology for automotive critical applications
- 185 °C rated junction temperature capability
- AEC-Q101 compliant qualification
- Very low on-state resistance for reduced conduction losses
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring high thermal stability and automotive reliability. The 185 °C rating allows operation in thermally demanding environments. Ensure gate drive sources are compatible with standard level requirements. Package limitations cap continuous current at 75 A regardless of chip rating.
Part Context
This part belongs to Nexperia's N-channel TrenchMOS standard level FET family. It is designed using plastic package technology optimized for surface-mounting. The product line targets robust performance in automotive and general power switching sectors, emphasizing durability and efficiency under high-stress conditions.
Replacement Considerations
Consult official Nexperia documentation for verified substitutes. Cross-reference pinout compatibility within the SOT428 package and ensure equivalent electrical parameters such as VDS, ID, and RDS(on) match design requirements before substitution.
