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Product Detailed Parameters
- Description：MOSFET N-CH 55V 43A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1310 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：94W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7225-55A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 43 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 25 mΩ at 25 °C and 50 mΩ at 175 °C junction temperature. Total power dissipation reaches 94 W at 25 °C. It supports a peak pulsed drain current of 173 A and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Compliant with AEC Q101 standards for automotive critical applications
- Optimized for low conduction losses through reduced on-state resistance
- Compatible with standard level gate drive sources
- Designed for thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust performance in automotive or industrial power switching contexts. The TrenchMOS technology ensures efficient operation with minimal conduction losses. Ensure the gate drive circuitry aligns with standard level requirements to fully leverage the device's capabilities. Thermal management must account for the specified junction temperature limits during high-current operations.
Part Context
This part belongs to Nexperia's portfolio of N-channel TrenchMOS standard level FETs. These devices are engineered for plastic packages using advanced trench technology to deliver high efficiency. The product line targets applications needing reliable power switching with optimized thermal and electrical characteristics for both automotive and general-purpose markets.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing requires matching key parameters such as voltage ratings, current capacity, and package type to ensure functional compatibility without design modification.
